esd proteted general features v ds = 30v,i d =11a r ds(on) < 10m ? @ v gs =10v r ds(on) < 14m ? @ v gs =4.5v esd rating: 2000v hbm high power and current handing capability lead free product is acquired surface mount package application pwm application load switch schematic diagram marking and pin assignment sop-8 top view package marking and ordering information device marking device device package reel size tape width quantity MSC0311WE sop-8 ?330mm 12mm 2500 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 10 v drain current-continuous i d 11 a drain current-pulsed (note 1) i dm 50 a maximum power dissipation p d 2.5 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 50 /w MSC0311WE 30v(d-s) dual n-channel enhancement mode power mos fet MSC0311WE lead free pin configuration more semiconductor company limited http://www.moresemi.com 1/6
electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 30 - v zero gate voltage drain current i dss v ds =30v,v gs =0v - - 1 a parameter symbol condition min typ max unit gate-body leakage current i gss v gs =10v,v ds =0v - - 10 a on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 1.0 1.5 2.0 v v gs =10v, i d =8a - 7 10 m ? drain-source on-state resistance r ds(on) v gs =4.5v, i d =6a - 10 14 m ? forward transconductance g fs v ds =10v,i d =11a 25 - - s dynamic characteristics (note4) input capacitance c lss - 1155 - pf output capacitance c oss - 260 - pf reverse transfer capacitance c rss v ds =15v,v gs =0v, f=1.0mhz - 95 - pf switching characteristics (note 4) turn-on delay time t d(on) - 10 ns turn-on rise time t r - 16 ns turn-off delay time t d(off) - 40 ns turn-off fall time t f v dd =15v,r l =2.2 ? v gs =5v,r gen =3 ? - 10.8 ns total gate charge q g - 17.5 nc gate-source charge q gs - 4.5 - nc gate-drain charge q gd v ds =15v,i d =8a, v gs =4.5v - 2.5 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =1a - - 1.2 v diode forward current (note 2) i s - - 11 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2 . % 4. guaranteed by design, not subject to production more semiconductor company limited http://www.moresemi.com 2/6 MSC0311WE
typical electrical and thermal characteristics vgs rgen vin g vdd rl vout s d figure 1:switching test circuit t j -junction temperature( ) figure 3 power dissipation vds drain-source voltage (v) figure 5 output characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms t j -junction temperature( ) figure 4 drain current i d drain current (a) figure 6 drain-source on-resistance p d power(w) i d - drain current (a i d - drain current (a) more semiconductor company limited http://www.moresemi.com 3/6 MSC0311WE
vgs gate-source voltage (v) figure 7 transfer characteristics vgs gate-source voltage (v) figure 9 rdson vs vgs qg gate charge (nc) figure 11 gate charge t j -junction temperature( ) figure 8 drain-source on-resistance vds drain-source voltage (v) figure 10 capacitance vs vds vsd source-drain voltage (v) figure 12 source- drain diode forward i d - drain current (a) rdson on-resistance(m ) vgs gate-source voltage (v) normalized on-resistance c capacitance (pf) i s - reverse drain current (a) more semiconductor company limited http://www.moresemi.com 4/6 MSC0311WE
vds drain-source voltage (v) figure 13 safe operation area square wave pluse duration(sec) figure 14 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance i d - drain current (a) more semiconductor company limited http://www.moresemi.com 5/6 MSC0311WE
sop-8 package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 1.350 1.750 0.053 0.069 a1 0.100 0.250 0.004 0.010 a2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 d 4.700 5.100 0.185 0.200 e 3.800 4.000 0.150 0.157 e1 5.800 6.200 0.228 0.244 e 1.270(bsc) 0.050(bsc) l 0.400 1.270 0.016 0.050 0 ? 8 ? 0 ? 8 ? more semiconductor company limited http://www.moresemi.com 6/6 MSC0311WE
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